MAX2312EEI

CDMA IF VGAs and I/Q Demodulators with VCO and Synthesizer

GeneralDescription TheMAX2310/MAX2312/MAX2314/MAX2316areIFreceiversdesignedfordual-band,dual-mode,andsingle-modeN-CDMAandW-CDMAcellularphonesystems.Thesignalpathconsistsofavariablegainamplifier(VGA)andI/Qdemodulator.Thedevicesfeatureguaranteed+2.7Voperation,a

MAX2312EEI

CDMA IF VGAs and I/Q Demodulators with VCO and Synthesizer

2312

BandpassFilter

2312

Pneumaticmuffler

2312-RC

HighCurrentToroidInductors

2312-RC

HighCurrentToroidInductors

2312-RC

HighCurrentToroidInductors

2312-RC

HighCurrentToroidInductorsHorizontalorverticalmount

2312-RC

HighCurrentToroidInductors

2312T

PhotoelectronicSmokedetectorwithElectronicHeatSensing

AM2312

MOSFET20VN-CHANNELENHANCEMENTMODE

DESCRIPTION TheAM2312isavailableinSOT-23Spackage. FEATURES VDS=20V RDS(ON),VGS@4.5V,IDS@5.0A=41mΩ RDS(ON),VGS@2.5V,IDS@4.5A=47mΩ Advancedtrenchprocesstechnology HighDensityCellDesignForUltraLowOn-Resistance Capableof2.5Vgatedrive Loweron-resistanc

AM2312N

N-Channel20-V(D-S)MOSFET

AP2312GN

N-CHANNELENHANCEMENTMODEPOWERMOSFET

APM2312

N-ChannelEnhancementModeMOSFET

Features •16V/5A,RDS(ON)=35mΩ(typ.)@VGS=4.5V RDS(ON)=45mΩ(typ.)@VGS=2.5V RDS(ON)=60mΩ(typ.)@VGS=1.8V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComput

APM2312A

N-ChannelEnhancementModeMOSFET

Features •16V/5A,RDS(ON)=35mΩ(typ.)@VGS=4.5V RDS(ON)=45mΩ(typ.)@VGS=2.5V RDS(ON)=60mΩ(typ.)@VGS=1.8V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComput

APM2312AC-TR

N-ChannelEnhancementModeMOSFET

Features •16V/5A,RDS(ON)=35mΩ(typ.)@VGS=4.5V RDS(ON)=45mΩ(typ.)@VGS=2.5V RDS(ON)=60mΩ(typ.)@VGS=1.8V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComput

BC2312

Plastic-EncapsulateMOSFETS

FEATURE TrenchFETPowerMOSFET APPLICATION DC/DCConverters LoadSwitchingforPortableApplications

BLM2312

N-ChannelEnhancementModePowerMOSFET

CES2312

N-Channel20V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverters •LoadSwitchforPortableApplications

CES2312

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,4.5A,RDS(ON)=33mΩ@VGS=4.5V. RDS(ON)=40mΩ@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.