MC-218SC

CoilComponents(SMD)

■Features 1.ExcellentHighFrequencyCharacteristics Insertionloss:0.6dBTYP. Phasebalance:±3degTYP. 2.HighlyReliableDesign PPSresinisusedfortheexteriorcladdingofthe cover,glassepoxysubstrateisusedfortheboard material,andsolderplatingisusedfor

MCR218

ThyristorsSilicon-ControlledRectifiers

...designedprimarilyforhalf-waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplies;orwhereverhalf-wavesilicongate-controlled,solid-statedevicesareneeded. •Glass-PassivatedJunctions •BlockingVoltageto800Volts •TO-220Construction—Lo

MCR218

SILICONCONTROLLEDRECTIFIERS

SILICONCONTROLLEDRECTIFIERS AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber.

MCR218

SiliconControlledRectifiersReverseBlockingThyristors

MCR218

Thyristors(SiliconControlledRectifiers)

...designedprimarilyforhalf-waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplies;orwhereverhalf-wavesilicongate-controlled,solid-statedevicesareneeded. •Glass-PassivatedJunctions •BlockingVoltageto800Volts •TO-220Construction—

MCR218FP

SiliconControlledRectifiers

SiliconControlledRectifiers ReverseBlockingThyristors ...designedprimarilyforhalf-waveaccontrolapplications,suchasmotorcontrols,heatingcontrolsandpowersupplycrowbarcircuits. •GlassPassivatedJunctionswithCenterGateFireforGreaterParameterUniformityandStability

MD218A

130mA,10BitCurrentSinkingVCMDriverwithI2CInterface

MD218B

130mA,10BitCurrentSinkingVCMDriverwithI2CInterface

MICRF218

3.3V,QwikRadio짰300MHzto450MHzReceiver

GeneralDescription TheMICRF218isa3.0Vto3.6V,300MHzto450MHzASK/OOKsuper-heterodynereceiverwithuserselectableIntermediateFrequency(IF)Bandwidthsof550kHzor1500kHzat433.92MHz,makingitanexcellentsolutionforusewithlow-costSAW-basedtransmittersortransmitterswhich

MICRF218

3.3V,315/433MHzWide-IFBandwidthASKReceiver