36V, 220kHz to 2.2MHz, 4A/6A/8A Fully Integrated Automotive Step-Down Converters

文件：757.62 Kbytes 页数：20 Pages

MAXIM

美信

GaAs Varactor Diodes Abrupt Junction

Description Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition. The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves. The diodes are available in a varie

文件：154.63 Kbytes 页数：2 Pages

MICROSEMI

美高森美

4 Watts, 860-900 MHz Cellular Radio RF Power Transistor

Description The 20006 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 4 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metal

文件：44.97 Kbytes 页数：3 Pages

ERICSSON

爱立信

SCR Trigger and Control Transformers

文件：33.96 Kbytes 页数：1 Pages

RHOMBUS-IND