包装：散装 类别：开发板，套件，编程器 评估板 - LED 驱动器 描述：EVAL KIT FOR MAX16803

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亚德诺

MOS INTEGRATED CIRCUIT

FEATURES • Low ON resistance (sum of ON resistors of top and bottom transistors) RON1 = 1.5 W TYP. (VM = 5.0 V) RON2 = 2.0 W TYP. (VM = 12.0 V) • Low current consumption: IDD = 0.4 mA TYP. • Stop mode function that turns OFF all output transistors • Compact surface mount package: 20-pin plas

文件：297.21 Kbytes 页数：14 Pages

RENESAS

瑞萨

MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT

DESCRIPTION The µPD16803 is a monolithic dual H bridge driver circuit which uses N-channel power MOS FETs in its driver stage. By employing the power MOS FETs for the output stage, this driver circuit has a substantially improved saturation voltage and power consumption as compared with convent

文件：97.4 Kbytes 页数：12 Pages

NEC

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Low ON resistance (sum of ON resistors of top and bottom transistors) RON1 = 1.5 W TYP. (VM = 5.0 V) RON2 = 2.0 W TYP. (VM = 12.0 V) • Low current consumption: IDD = 0.4 mA TYP. • Stop mode function that turns OFF all output transistors • Compact surface mount package: 20-pin plas

文件：297.21 Kbytes 页数：14 Pages

RENESAS

瑞萨