超低电压电平转换器

MAX13000E–MAX13005E是6通道电平转换器，能够为多电压系统的数据传输提供电平转换功能。外接电源电压VCC和VL分别设置器件两侧的逻辑电平。器件VL一侧的逻辑信号在器件的VCC一侧转换为高压逻辑信号，反之亦然。\n MAX13000E–MAX13005E具有小于4µA的VCC和VL静态电源电流。MAX13000E–MAX13005E还为VCC侧的I/O提供±15kV ESD保护，可在具有外部信号走线的应用中提供更强大的保护。ESD保护采用人体模型(HBM)。MAX13000E/MAX13001E/MAX13002E能够确保实现230kbps的数据速率。MAX13003E/MAX1 \n• 可保证的数据速率选项 230kbps (MAX13000E/MAX13001E/MAX13002E) 20Mbps (MAX13003E/MAX13004E/MAX13005E) \n• 双向电平转换，无DIRECTION输入控制 \n• VL电压可低至+0.9V，VCC电压可低至+1.5V \n• VCC侧I/O线具有±15kV ESD保护(HBM) \n• 低静态电流：<4µA \n• 使能/关断控制 \n• 2mm x 2mm、16焊球UCSP封装以及引脚封装 \n• 可连接CMOS或开漏极输出;

ADI

亚德诺

Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in efficient operation at higher frequencies. This device is ideally suited for high frequency e

文件：111.23 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in efficient operation at higher frequencies. This device is ideally suited for high frequency ele

文件：138.69 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in efficient operation at higher frequencies. This device is ideally suited for high frequency e

文件：111.23 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉