MASW-004240-13170W中文资料HMIC™ PIN Diode with Bias数据手册MACOM规格书

描述 Description

SP4T switch chip with integrated bias network. It utilizes MACOM's HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310, which allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC™ devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Patterned gold backside metal allows for manual or re-flow soldering without the need for wire bond connections to the RF and bias ports. The chip may be soldered using 80Au/20Sn, RoHS compliant solders or electrically conductive silver epoxy. The RF bond pads are labeled J1-J5 and are 375x375µM (15x15mils) square. The DC bias bond pads are labeled B2-B5 and are also 375x375µM (15x15mils) square. The MASW-004240-13170W has been designed for 24GHz automotive radar sensor applications and is also ideally suited for use at 10GHz. The switch is turned on by applying a forward current of +12mA at 4V to the appropriate bias port and is turned off at 0V. The RF bias network has been incorporated into the design for ease of use and space considerations.

特性 Features

·Operating Freq. 10 ± 2GHz or 24 ± 2GHz
·RoHS Compliant
·Polymer Scratch Protection
·Fully Monolithic
·Rugged, Glass Encapsulated Construction
·Low Current Consumption +12 mA for On State/0V for Off Condition
·No Wire Bonds Required
·Integrated Bias Network
·Surface Mount Device

应用 Application

·Aerospace and Defense
·ISM