MASW-002102-13580RF/IF射频/中频RFID的射频开关规格书PDF中文资料

描述 Description

The MASW-002102-13580 and MASW-003102-13590 devices are SP2T and SP3T broad band switches with integrated bias networks utilizing M/A-COM Technology Solutions HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies.

特性 Features

• Broad Bandwidth Specified up to 18 GHz

• Usable up to 26 GHz

• Integrated Bias Network

• Low Insertion Loss / High Isolation

• Rugged

• Fully Monolithic

• Glass Encapsulate Construction

• RoHS Compliant* and 260°C Reflow Compatible