GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128關s Pulse, 10 Duty

Product Description The MAGX-000912-250L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for civilian and military pulsed avionics amplifier applications the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN . Using state of

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MA-COM

GaN on SiC Depletion-Mode Transistor Technology

Description The MAGX-000912-500L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor optimized for pulsed avionics and radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficie

文件：861.66 Kbytes 页数：6 Pages

MA-COM

GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10 Duty Cycle

Product Description The MAGX-002731-100L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for civilian and military radar pulsed applications between 2700 - 3100 MHz. Using state of the art wafer fabrication processes, these high performance tra

文件：375.93 Kbytes 页数：7 Pages

MA-COM

GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10 Duty Cycle

Product Description The MAGX-002731-100L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for civilian and military radar pulsed applications between 2700 - 3100 MHz. Using state of the art wafer fabrication processes, these high performance tra

文件：375.93 Kbytes 页数：7 Pages

MA-COM

GaN on SiC HEMT Pulsed Power Transistor

Description The MAGX-000912-500L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor optimized for pulsed avionics and radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficie

文件：665.31 Kbytes 页数：8 Pages

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MAGNETIC SENSORS

文件：389.13 Kbytes 页数：6 Pages

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Next generation high power RF semiconductor technology

文件：12.93189 Mbytes 页数：9 Pages

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Next generation high power RF semiconductor technology

文件：12.93189 Mbytes 页数：9 Pages

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Next generation high power RF semiconductor technology

文件：12.93189 Mbytes 页数：9 Pages

MA-COM

MAGNETIC SENSORS

文件：389.13 Kbytes 页数：6 Pages

SICK

西克