RADIATION HARD 4096 x 1 BIT STATIC RAM

The MA5104 4k Static RAM is configured as 4096 x 1 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The device has separate input and output terminals controlled by Chip Select and Write Enable. The design uses a 6 transistor cell and has full static operatio

文件：262.01 Kbytes 页数：12 Pages

ZARLINK

Zarlink Semiconductor Inc

RADIATION HARD 4096 x 1 BIT STATIC RAM

The MA5104 4k Static RAM is configured as 4096 x 1 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The device has separate input and output terminals controlled by Chip Select and Write Enable. The design uses a 6 transistor cell and has full static operatio

文件：262.01 Kbytes 页数：12 Pages

ZARLINK

Zarlink Semiconductor Inc

RADIATION HARD 4096 x 1 BIT STATIC RAM

The MA5104 4k Static RAM is configured as 4096 x 1 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The device has separate input and output terminals controlled by Chip Select and Write Enable. The design uses a 6 transistor cell and has full static operatio

文件：262.01 Kbytes 页数：12 Pages

ZARLINK

Zarlink Semiconductor Inc

RADIATION HARD 4096 x 1 BIT STATIC RAM

The MA5104 4k Static RAM is configured as 4096 x 1 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The device has separate input and output terminals controlled by Chip Select and Write Enable. The design uses a 6 transistor cell and has full static operatio

文件：262.01 Kbytes 页数：12 Pages

ZARLINK

Zarlink Semiconductor Inc

RADIATION HARD 4096 x 1 BIT STATIC RAM

The MA5104 4k Static RAM is configured as 4096 x 1 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The device has separate input and output terminals controlled by Chip Select and Write Enable. The design uses a 6 transistor cell and has full static operatio

文件：262.01 Kbytes 页数：12 Pages

ZARLINK

Zarlink Semiconductor Inc

RADIATION HARD 4096 x 1 BIT STATIC RAM

The MA5104 4k Static RAM is configured as 4096 x 1 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The device has separate input and output terminals controlled by Chip Select and Write Enable. The design uses a 6 transistor cell and has full static operatio

文件：262.01 Kbytes 页数：12 Pages

ZARLINK

Zarlink Semiconductor Inc

RADIATION HARD 4096 x 1 BIT STATIC RAM

The MA5104 4k Static RAM is configured as 4096 x 1 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The device has separate input and output terminals controlled by Chip Select and Write Enable. The design uses a 6 transistor cell and has full static operatio

文件：262.01 Kbytes 页数：12 Pages

ZARLINK

Zarlink Semiconductor Inc

RADIATION HARD 4096 x 1 BIT STATIC RAM

The MA5104 4k Static RAM is configured as 4096 x 1 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The device has separate input and output terminals controlled by Chip Select and Write Enable. The design uses a 6 transistor cell and has full static operatio

文件：262.01 Kbytes 页数：12 Pages

ZARLINK

Zarlink Semiconductor Inc

RADIATION HARD 4096 x 1 BIT STATIC RAM

The MA5104 4k Static RAM is configured as 4096 x 1 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The device has separate input and output terminals controlled by Chip Select and Write Enable. The design uses a 6 transistor cell and has full static operatio

文件：262.01 Kbytes 页数：12 Pages

ZARLINK

Zarlink Semiconductor Inc

RADIATION HARD 4096 x 1 BIT STATIC RAM

The MA5104 4k Static RAM is configured as 4096 x 1 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The device has separate input and output terminals controlled by Chip Select and Write Enable. The design uses a 6 transistor cell and has full static operatio

文件：262.01 Kbytes 页数：12 Pages

ZARLINK

Zarlink Semiconductor Inc