Silicon Bidirectional Thyristors

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MOTOROLA

摩托罗拉

Silicon Bidirectional Thyristors

恩XP

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

SWITCHMODE Power Rectifiers DPAK Surface Mount Package . . . designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. These state–of–the–art devices have the following features: • Extremel

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MOTOROLA

摩托罗拉

SCHOTTKY BARRIER RECTIFIERS

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi

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ONSEMI

安森美半导体

Silicon NPN RF Power Transistor 40W @ 175MHz

Description: The NTE320 and NTE320F are silicon NPN power transistors designed for 12.5V VHF large–signal amplifier applications required in commercial and industrial equipment operating to 300MHz. Features: ● Specified 12.5V, 175MHz Characteristics: Output Power: 40W Minimum Gain: 4.

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NTE