MAAM12021TR规格书应用电路原装现货MA-COM-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
MAAM12021TR	文件：172.27 Kbytes Page：4 Pages	Low Noise Amplifier 1.5 - 1.6 GHz 文件：172.27 Kbytes 页数：4 Pages	MA-COM	MA-COM
MAAM12021TR	文件：117.87 Kbytes Page：3 Pages	Low Noise Amplifier 1.5 - 1.6 GHz 文件：117.87 Kbytes 页数：3 Pages	MACOM	MACOM
MJ12021	文件：78.11 Kbytes Page：2 Pages	isc Silicon NPN Power Transistor 文件：78.11 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
12021	文件：740.8 Kbytes Page：1 Pages	Single and Dual Row Wire Wrap Pins Collet Socket ??Series 508 文件：740.8 Kbytes 页数：1 Pages	ARIES	ARIES
ACE12021A	文件：221.65 Kbytes Page：3 Pages	Dual P-Channel Enhancement Mode MOSFET Description The ACE12021A is the Dual P-Channel enhancement mode Power field effect transistors are produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance and provide superior switching performance. These device 文件：221.65 Kbytes 页数：3 Pages	ACE	ACE
ACE12021AKG+H	文件：221.65 Kbytes Page：3 Pages	Dual P-Channel Enhancement Mode MOSFET Description The ACE12021A is the Dual P-Channel enhancement mode Power field effect transistors are produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance and provide superior switching performance. These device 文件：221.65 Kbytes 页数：3 Pages	ACE	ACE

更多MAAM12021TR供应商更新时间2026-1-29 14:12:00