PIN diodes Silicon epitaxial planar type

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PANASONIC

松下

RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8.0 dB Efficiency 60 (Typ) • Cost Effective PowerMacro Pa

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MOTOROLA

摩托罗拉

SURFACE MOUNT SILICON ZENER DIODES

VZ : 3.9 - 200 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

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EIC

TRANSISTOR INVERTOR INVERTER FOR AIR CONDITIONOR POWER TRANSISTOR BASE DRIVE

Transistor Inverter Inverter For Air Conditioner Power Transistor Base Drive The TOSHIBA TLP557 consists of a GaAℓAs light emitting diode and an integrated photodetector. This unit is 8−lead DIP package. TLP557 is suitable for base driving circuit of power transistor module up to 20A. Extern

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TOSHIBA

东芝