MA4SW510B-1数据手册RF/IF射频/中频RFID的射频开关规格书PDF

描述 Description

The MA4SW510B-1 device is a SP5T broadband switch with integrated bias network utilizing MACOM's HMICT™(Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metallization allows for manual or automatic chip bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders or electrically conductive silver epoxy. These high performance switches are suitable for use in multi-band ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard +5V/-5V, TTL controlled PIN diode driver, 80nS switching speeds can be achieved.

特性 Features

·Broad Bandwidth Specified up to 18 GHz
·Fully Monolithic
·Rugged, Glass Encapsulated Construction
·Integrated Bias Network
·Usable up to 26 GHz
·Low Insertion Loss / High Isolation

应用 Application

·Aerospace and Defense
·ISM