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MA4E2513L-1289中文资料Low Barrier Series Tee Si数据手册MACOM规格书

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厂商型号

MA4E2513L-1289

功能描述

Low Barrier Series Tee Si

制造商

MACOM Tyco Electronics

数据手册

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更新时间

2025-9-22 21:31:00

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MA4E2513L-1289规格书详情

描述 Description

The MA4E2513L-1289 SURMOUNTTM Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC™) process. HMIC™ circuits consist of Silicon pedestals which form diodes or via conductors embedded in glass dielectric, which acts as the low dispersion, microstrip transmission medium. The combination of silicon and glass allows HMIC™ devices to have excellent loss and power dissipation characteristics in a low profile, reliable device. The Surmount Schottky devices are excellent choices for circuits requiring the small parasitics of a beam lead device coupled with the superior mechanical performance of a chip. The Surmount structure employs very low resistance silicon vias to connect the Schottky contacts to the metalized mounting pads on the bottom surface of the chip. These devices are reliable, repeatable, and a lower cost performance solution to conventional devices. They have lower susceptibility to electrostatic discharge than conventional beam lead Schottky diodes. The multi-layer metalization employed in the fabrication of the Surmount Schottky junctions includes a platinum diffusion barrier, which permits all devices to be subjected to a 16-hour non-operating stabilization bake at 300°C. The extremely small “0301” outline allows for Surface Mount placement and multi-functional polarity orientations. The MA4E2513L-1289 SURMOUNT™ Diode is recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors, and limiters. The HMIC™ construction facilitates the direct replacement of more fragile beam lead diodes with the corresponding surmount diode, which can be connected to a hard or soft substrate circuit with solder.

特性 Features

·Extremely Low Parasitic Capitance and Inductance •

• •
·Lower Susceptibility to ESD Damage
·Reliable, Multilayer Metalization with a Diffusion Barrier, 100 % Stabilization Bake (300°C, 16 hours)
·Rugged HMIC™ Construction with Polyimide Scratch Protection
·Extremely Small “0301” (1000 x 300 um) Footprint
• Surface Mountable in Microwave Circuits, No Wirebonds Required

应用 Application

·ISM

技术参数

  • 制造商编号

    :MA4E2513L-1289

  • 生产厂家

    :MACOM

  • Vf(V)

    :-0.7000

  • Vb

    :3.00

  • Total Capacitance(pF)

    :0.120

  • Dynamic Resistance(ohms)

    :10.0

  • Junction Capacitance(pF)

    :0.120

  • Package Category

    :Surface Mount Die

  • Package

    :ODS-1289

供应商 型号 品牌 批号 封装 库存 备注 价格
MACOM
2450+
SMD
9850
只做原厂原装正品现货或订货假一赔十!
询价
MACOM
21+
2000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
M/A-COM
24+
SMD
5500
M/A-COM专营品牌绝对进口原装假一赔十
询价
MACOM
/ROHS.original
NA
10501
射频元件二极管-正纳电子/ 原材料及元器件
询价
M/A-COM
23+
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
MACOM
23+
SMD
10065
原装正品,有挂有货,假一赔十
询价
M/A-COM
22+
NA
1000
只做原装,价格优惠,长期供货。
询价
M/A-COM
20+
NA
1000
全新原装现货,一片也是批量价。
询价
M/A-COM
NA
5500
一级代理 原装正品假一罚十价格优势长期供货
询价
MACOM
25+
SMD
50649
询价