Silicon epitaxial planar type

文件：73.1 Kbytes 页数：3 Pages

PANASONIC

松下

N-CHANNEL MOS BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Electrical Performance

文件：177.91 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

N-CHANNEL MOS BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Electrical Performance

文件：177.91 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

N-CHANNEL MOS BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Electrical Performance

文件：177.91 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉