For 1.9 GHz - Power Amplifier

DESCRIPTION The MA1046-1 is a 1.9 GHz band power amplifier (Po = +3.1W), constructed by 3 stages of GaAs MESFET, RF matching circuit, and DC bias circuit. The shield cap is made of metal. Input and Output impedances are designed to 50Ω. FEATURES Po = +35.0 dBm, Gain = +32 dB (min.) @1.9

文件：26.53 Kbytes 页数：1 Pages

Mitsubishi

三菱电机

For 1.9GHz - power amplifier

DESCRIPTION\nThe MA1046-1 is a 1.9 GHz band power amplifier (Po = +3.1W), constructed by 3 stages of GaAs MESFET, RF matching circuit, and DC bias circuit. The shield cap is made of metal. Input and Output impedances are designed to 50Ω.FEATURES\nPo = +35.0 dBm, Gain = +32 dB (min.) @1.9 GHz\nVd1, 2 Po = +35.0 dBm, Gain = +32 dB (min.) @1.9 GHz\nVd1, 2 = +6.0V, Vd3 = +10.0V\nVg1, 2 = –5.0V, Vg3 = 3.0V;

MITSUBISHI

三菱电机

1째C Multiple Temperature Sensor with Beta Compensation and Hottest of Thermal Zones

文件：574.91 Kbytes 页数：36 Pages

SMSC

SMSC Corporation

1째C Multiple Temperature Sensor

文件：591.67 Kbytes 页数：37 Pages

SMSC

SMSC Corporation