3.4 V, 1.2 W RF Power Amplifier IC

Description The MA02107AF is a three stage power amplifier, designed for paging applications to have an output power of +30.8 dBm with an input power of 0 dBm. This power amplifier operates at +3.4 volts with 55 typical power added efficiency. The MA02107AF is mounted in a standard outline 16-pin

文件：143.82 Kbytes 页数：4 Pages

MACOM

HIGH INSERTION GAIN: 18.5 dB at 500 MHz

DESCRIPTION NECs NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE021 series is available as a chip or in several package styles. The ser

文件：184.42 Kbytes 页数：12 Pages

CEL

NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

[CEL] DESCRIPTION NECs NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE021 series is available as a chip or in several package styl

文件：171.51 Kbytes 页数：12 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

HIGH INSERTION GAIN: 18.5 dB at 500 MHz

DESCRIPTION NECs NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE021 series is available as a chip or in several package styles. The ser

文件：184.42 Kbytes 页数：12 Pages

CEL