M95512-DR集成电路（IC）的存储器规格书PDF中文资料

M95512-DR属于集成电路（IC）的存储器。由意法半导体集团制造生产的M95512-DR存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

描述 Description

The M95512-W, M95512-R and M95512-DR are electrically erasable programmable memory (EEPROM) devices accessed by a high-speed SPI-compatible bus. In the rest of the document these devices are referred to as M95512, unless otherwise specified. The M95512-DR also offers an additional page, named the Identification Page (128 bytes) which can be written and (later) permanently locked in Read-only mode. This Identification Page offers flexibility in the application board production line, as it can be used to store unique identification parameters and/or parameters specific to the production line.

特性 Features

■ Compatible with the Serial Peripheral Interface (SPI) bus

■ Memory array

– 512 Kb (64 Kbytes) of EEPROM

– Page size: 128 bytes

■ Additional Write lockable Page (Identification page)

■ Write

– Byte Write within 5 ms

– Page Write within 5 ms

■ Write Protect: quarter, half or whole memory array

■ High-speed clock frequency (20 MHz)

■ Single supply voltage: 1.8 V to 5.5 V

■ More than 1 Million Write cycles

■ More than 40-year data retention

■ Enhanced ESD Protection

■ Packages

– ECOPACK2® (RoHS compliant and Halogen-free)