M95512-DF数据手册集成电路（IC）的存储器规格书PDF

描述 Description

The M95512 devices are electrically erasable programmable memories (EEPROMs) organized as 65536 x 8 bits, accessed through the SPI bus.

The M95512-W can operate with a supply voltage from 2.5 V to 5.5 V, the M95512-R can operate with a supply voltage from 1.8 V to 5.5 V and the M95512-DF can operate with a supply voltage from 1.7 V to 5.5 V, over an ambient temperature range of -40 °C / +85 °C.

The M95512-DF offers an additional page, named the Identification page (128 bytes). The Identification page can be used to store sensitive application parameters that can be (later) permanently locked in read-only mode.

The SPI bus signals are C, D and Q, as shown in Figure 1 and Table 1. The device is selected when Chip select (S) is driven low. Communications with the device can be interrupted when the HOLD is driven low.

特性 Features

• Compatible with the serial peripheral interface (SPI) bus
• Memory array
•512-Kbit (64-Kbyte) of EEPROM
•Page size: 128 bytes
•Additional write lockable page (Identification page)
• Write time
•Byte Write within 5 ms
•Page Write within 5 ms
• Write protect
•quarter array
•half array
•whole memory array
• High-speed clock: 16 MHz
• Single supply voltage:
•2.5 V to 5.5 V for M95512-W
•1.8 V to 5.5 V for M95512-R
•1.7 V to 5.5 V for M95512-DF
• Operating temperature range: from -40 °C up to +85 °C
• Enhanced ESD protection
• More than 4 million Write cycles
• More than 200-year data retention
• Packages
•SO8N (ECOPACK2)
•TSSOP8 (ECOPACK2)
•UFDFPN8 (ECOPACK2)
•WLCSP8 (ECOPACK2)

简介

M95512-DF属于集成电路（IC）的存储器。由制造生产的M95512-DF存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。