M93S66集成电路(IC)存储器规格书PDF中文资料
厂商型号 |
M93S66 |
参数属性 | M93S66 封装/外壳为8-SOIC(0.154",3.90mm 宽);包装为卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带;类别为集成电路(IC) > 存储器;产品描述:IC EEPROM 4KBIT SPI 2MHZ 8SO |
功能描述 | 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
文件大小 |
525.45 Kbytes |
页面数量 |
34 页 |
生产厂商 | STMicroelectronics |
企业简称 |
STMICROELECTRONICS【意法半导体】 |
中文名称 | 意法半导体(ST)集团官网 |
原厂标识 | |
数据手册 | |
更新时间 | 2024-5-2 23:00:00 |
M93S66规格书详情
SUMMARY DESCRIPTION
This specification covers a range of 4K, 2K, 1K bit serial Electrically Erasable Programmable Memory (EEPROM) products (respectively for M93S66, M93S56, M93S46). In this text, these products are collectively referred to as M93Sx6. Figure 2. Logic Diagram and instructions used to set the memory protection. These are summarized in Table 2. and Table 3.).
A Read Data from Memory (READ) instruction loads the address of the first word to be read into an internal address pointer. The data contained at this address is then clocked out serially. The ad dress pointer is automatically incremented after the data is output and, if the Chip Select Input (S) is held High, the M93Sx6 can output a sequential stream of data words. In this way, the memory can be read as a data stream from 16 to 4096 bits (for the M93S66), or continuously as the address counter automatically rolls over to 00h when the highest address is reached.
Within the time required by a programming cycle (tW), up to 4 words may be written with help of the Page Write instruction. the whole memory may also be erased, or set to a predetermined pattern, by using the Write All instruction
FEATURES SUMMARY
■ Industry Standard MICROWIRE Bus
■ Single Supply Voltage:
– 4.5 to 5.5V for M93Sx6
– 2.5 to 5.5V for M93Sx6-W
– 1.8 to 5.5V for M93Sx6-R
■ Single Organization: by Word (x16)
■ Programming Instructions that work on: Word or Entire Memory
■ Self-timed Programming Cycle with Auto Erase
■ User Defined Write Protected Area
■ Page Write Mode (4 words)
■ Ready/Busy Signal During Programming
■ Speed:
– 1MHz Clock Rate, 10ms Write Time (Current product, identified by process identification letter F or M)
– 2MHz Clock Rate, 5ms Write Time (New Product, identified by process identification letter W or G)
■ Sequential Read Operation
■ Enhanced ESD/Latch-Up Behavior
■ More than 1 Million Erase/Write Cycles
■ More than 40 Year Data Retention
M93S66属于集成电路(IC) > 存储器。意法半导体(ST)集团制造生产的M93S66存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种,格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等,接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。
产品属性
- 产品编号:
M93S66-WMN6P
- 制造商:
STMicroelectronics
- 类别:
集成电路(IC) > 存储器
- 包装:
卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带
- 存储器类型:
非易失
- 存储器格式:
EEPROM
- 技术:
EEPROM
- 存储容量:
4Kb(256 x 16)
- 存储器接口:
SPI
- 写周期时间 - 字,页:
5ms
- 电压 - 供电:
2.5V ~ 5.5V
- 工作温度:
-40°C ~ 85°C(TA)
- 安装类型:
表面贴装型
- 封装/外壳:
8-SOIC(0.154",3.90mm 宽)
- 供应商器件封装:
8-SOIC
- 描述:
IC EEPROM 4KBIT SPI 2MHZ 8SO
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST(意法半导体) |
23+ |
SOP8 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
ST/意法 |
23+ |
NA/ |
7487 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ST |
2016+ |
SOP8 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
ST |
2020+ |
SOIC-8 |
15000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
ST |
20+ |
SOP-8 |
2960 |
诚信交易大量库存现货 |
询价 | ||
STMicroelect |
23+ |
8-SOIC |
51536 |
询价 | |||
ST/意法 |
22+ |
SOP-8 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
ST |
21+ |
DIP-8 |
35200 |
一级代理分销/放心采购 |
询价 | ||
ST/意法 |
23+ |
SOP8 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
ST/意法半导体 |
21+ |
SMD/SMT |
8860 |
原装现货,实单价优 |
询价 |
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