M93S66-W中文资料4 Kbit（16位宽）MICROWIRE串行访问EEPROM，具有块保护数据手册ST规格书

描述 Description

The M93S46, M93S56, M93S66 devices are Electrically Erasable PROgrammable Memories (EEPROMs) organized as 64, 128 or 256 words (one word is 16 bits), accessed through the MICROWIRE bus.

The M93S46, M93S56, M93S66 can operate with a supply voltage from 2.5 V to 5.5 V over an ambient temperature range of -40 °C / +85 °C.

特性 Features

• Compatible with MICROWIRE bus serial interface
• Memory array
•1 Kbit, 2 Kbit or 4 Kbit of EEPROM
•Organized by word (16b)
•Page = 4 words
• Write
•Byte write within 5 ms
•Page write within 5 ms
•Ready/busy signal during programming
• User defined write protected area
• High-speed clock: 2 MHz
• Single supply voltage:
•2.5 V to 5.5 V
• Operating temperature range: -40 °C up to +85 °C.
• Enhanced ESD protection
• More than 4 million write cycles
• More than 200-year data retention
• Packages
•PDIP8 ECOPACK®1
•TSSOP8 ECOPACK®2
•SO8 ECOPACK®2

简介

M93S66-W属于集成电路（IC）的存储器。由制造生产的M93S66-W存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。