HEX BUS BUFFER 3-STATE HCT367 NONINVERTING, HCT368 INVERTING

DESCRIPTION The M54/74HCT367 and the M54/74HCT368 are high speed CMOS HEX BUS BUFFER (3-STATE) fabricated in silicon gate C2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 11 ns (TYP.) AT VCC = 5 V ■ LOW POWER

文件：248.03 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

HEX BUS BUFFER WITH 3 STATE OUTPUT NON INVERTING

DESCRIPTION The M74HCT367 is an high speed CMOS HEX BUS BUFFER 3-STATE OUTPUTS fabricated with silicon gate C2MOS technology. ■ HIGH SPEED: tPD = 14ns (TYP.) at VCC = 4.5V ■ LOW POWER DISSIPATION: ICC = 4µA(MAX.) at TA=25°C ■ COMPATIBLE WITH TTL OUTPUTS : VIH = 2V (MI

文件：203.35 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

HEX BUS BUFFER WITH 3 STATE OUTPUT NON INVERTING

ST

意法半导体

HEX BUS BUFFER 3-STATE HCT367 NONINVERTING, HCT368 INVERTING

DESCRIPTION The M54/74HCT367 and the M54/74HCT368 are high speed CMOS HEX BUS BUFFER (3-STATE) fabricated in silicon gate C2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 11 ns (TYP.) AT VCC = 5 V ■ LOW POWER

文件：248.03 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

HEX BUS BUFFER WITH 3 STATE OUTPUT NON INVERTING

DESCRIPTION The M74HCT367 is an high speed CMOS HEX BUS BUFFER 3-STATE OUTPUTS fabricated with silicon gate C2MOS technology. ■ HIGH SPEED: tPD = 14ns (TYP.) at VCC = 4.5V ■ LOW POWER DISSIPATION: ICC = 4µA(MAX.) at TA=25°C ■ COMPATIBLE WITH TTL OUTPUTS : VIH = 2V (MI

文件：203.35 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

HEX BUS BUFFER 3-STATE HCT367 NONINVERTING, HCT368 INVERTING

DESCRIPTION The M54/74HCT367 and the M54/74HCT368 are high speed CMOS HEX BUS BUFFER (3-STATE) fabricated in silicon gate C2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 11 ns (TYP.) AT VCC = 5 V ■ LOW POWER

文件：248.03 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

HEX BUS BUFFER 3-STATE HCT367 NONINVERTING, HCT368 INVERTING

DESCRIPTION The M54/74HCT367 and the M54/74HCT368 are high speed CMOS HEX BUS BUFFER (3-STATE) fabricated in silicon gate C2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 11 ns (TYP.) AT VCC = 5 V ■ LOW POWER

文件：248.03 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

HEX BUS BUFFER WITH 3 STATE OUTPUT NON INVERTING

DESCRIPTION The M74HCT367 is an high speed CMOS HEX BUS BUFFER 3-STATE OUTPUTS fabricated with silicon gate C2MOS technology. ■ HIGH SPEED: tPD = 14ns (TYP.) at VCC = 4.5V ■ LOW POWER DISSIPATION: ICC = 4µA(MAX.) at TA=25°C ■ COMPATIBLE WITH TTL OUTPUTS : VIH = 2V (MI

文件：203.35 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

HEX BUS BUFFER WITH 3 STATE OUTPUT NON INVERTING

DESCRIPTION The M74HCT367 is an high speed CMOS HEX BUS BUFFER 3-STATE OUTPUTS fabricated with silicon gate C2MOS technology. ■ HIGH SPEED: tPD = 14ns (TYP.) at VCC = 4.5V ■ LOW POWER DISSIPATION: ICC = 4µA(MAX.) at TA=25°C ■ COMPATIBLE WITH TTL OUTPUTS : VIH = 2V (MI

文件：203.35 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

HEX BUS BUFFER WITH 3 STATE OUTPUT NON INVERTING

DESCRIPTION The M74HCT367 is an high speed CMOS HEX BUS BUFFER 3-STATE OUTPUTS fabricated with silicon gate C2MOS technology. ■ HIGH SPEED: tPD = 14ns (TYP.) at VCC = 4.5V ■ LOW POWER DISSIPATION: ICC = 4µA(MAX.) at TA=25°C ■ COMPATIBLE WITH TTL OUTPUTS : VIH = 2V (MI

文件：203.35 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体