DUAL J-K FLIP FLOP WITH PRESET AND CLEAR

DESCRIPTION The M74HC76 is an high speed CMOS DUAL J-K FLIP FLOP WITH CLEAR fabricated with silicon gate C2MOS technology. ■ HIGH SPEED : fMAX = 67MHz (TYP.) at VCC = 6V ■ LOW POWER DISSIPATION: ICC =2µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VNIH = VNIL = 28 VCC (MIN.) ■ SYMMETRICAL OUTPUT

文件：508.59 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

DUAL J-K FLIP FLOP WITH PRESET AND CLEAR

DESCRIPTION The M54/74HC76 is a high speed CMOSDUAL J-K FLIP FLOP fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. Depending on with the logic level at the J and K inputs this device changes state on the ne

文件：251.87 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

DUAL J-K FLIP FLOP WITH PRESET AND CLEAR

DESCRIPTION The M74HC76 is an high speed CMOS DUAL J-K FLIP FLOP WITH CLEAR fabricated with silicon gate C2MOS technology. ■ HIGH SPEED : fMAX = 67MHz (TYP.) at VCC = 6V ■ LOW POWER DISSIPATION: ICC =2µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VNIH = VNIL = 28 VCC (MIN.) ■ SYMMETRICAL OUTPUT

文件：508.59 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

OCTAL BUS TRANSCEIVER (3-STATE):HC7645 NONINVERTING HC7640 INVERTING ,HC7643 INVERTING/NONINVERTING

DESCRIPTION The M54/74HC7245 HC7640, HC7643 and HC7645 utilise silicon gate C2MOS technology to achive operating speeds equivalent to LSTTL devices. ■ HIGH SPEED tPD = 12 ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) at TA = 25 °C ■ HIGH NOISE IMMUNITY VH = 1.1 (TYP.) at VCC

文件：257.51 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

OCTAL BUS TRANSCEIVER (3-STATE):HC7645 NONINVERTING HC7640 INVERTING ,HC7643 INVERTING/NONINVERTING

DESCRIPTION The M54/74HC7245 HC7640, HC7643 and HC7645 utilise silicon gate C2MOS technology to achive operating speeds equivalent to LSTTL devices. ■ HIGH SPEED tPD = 12 ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) at TA = 25 °C ■ HIGH NOISE IMMUNITY VH = 1.1 (TYP.) at VCC

文件：257.51 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

OCTAL BUS TRANSCEIVER (3-STATE):HC7645 NONINVERTING HC7640 INVERTING ,HC7643 INVERTING/NONINVERTING

DESCRIPTION The M54/74HC7245 HC7640, HC7643 and HC7645 utilise silicon gate C2MOS technology to achive operating speeds equivalent to LSTTL devices. ■ HIGH SPEED tPD = 12 ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) at TA = 25 °C ■ HIGH NOISE IMMUNITY VH = 1.1 (TYP.) at VCC

文件：257.51 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

OCTAL BUS TRANSCEIVER (3-STATE):HC7645 NONINVERTING HC7640 INVERTING ,HC7643 INVERTING/NONINVERTING

DESCRIPTION The M54/74HC7245 HC7640, HC7643 and HC7645 utilise silicon gate C2MOS technology to achive operating speeds equivalent to LSTTL devices. ■ HIGH SPEED tPD = 12 ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) at TA = 25 °C ■ HIGH NOISE IMMUNITY VH = 1.1 (TYP.) at VCC

文件：257.51 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

OCTAL BUS TRANSCEIVER (3-STATE):HC7645 NONINVERTING HC7640 INVERTING ,HC7643 INVERTING/NONINVERTING

DESCRIPTION The M54/74HC7245 HC7640, HC7643 and HC7645 utilise silicon gate C2MOS technology to achive operating speeds equivalent to LSTTL devices. ■ HIGH SPEED tPD = 12 ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) at TA = 25 °C ■ HIGH NOISE IMMUNITY VH = 1.1 (TYP.) at VCC

文件：257.51 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

OCTAL BUS TRANSCEIVER (3-STATE):HC7645 NONINVERTING HC7640 INVERTING ,HC7643 INVERTING/NONINVERTING

DESCRIPTION The M54/74HC7245 HC7640, HC7643 and HC7645 utilise silicon gate C2MOS technology to achive operating speeds equivalent to LSTTL devices. ■ HIGH SPEED tPD = 12 ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) at TA = 25 °C ■ HIGH NOISE IMMUNITY VH = 1.1 (TYP.) at VCC

文件：257.51 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

OCTAL BUS TRANSCEIVER (3-STATE):HC7645 NONINVERTING HC7640 INVERTING ,HC7643 INVERTING/NONINVERTING

DESCRIPTION The M54/74HC7245 HC7640, HC7643 and HC7645 utilise silicon gate C2MOS technology to achive operating speeds equivalent to LSTTL devices. ■ HIGH SPEED tPD = 12 ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) at TA = 25 °C ■ HIGH NOISE IMMUNITY VH = 1.1 (TYP.) at VCC

文件：257.51 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体