HC266 QUAD EXCLUSIVE NOR GATE WITH OPEN DRAIN HC7266 QUAD EXCLUSIVE NOR GATE

DESCRIPTION The M54/74HC266/7266 are high speed CMOS QUAD EXCLUSIVE NOR GATES, fabricated in silicon gate C2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 10 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC

文件：246.45 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

QUAD EXCLUSIVE NOR GATE WITH OPEN DRAIN

DESCRIPTION The M54/74HC266/7266 are high speed CMOS QUAD EXCLUSIVE NOR GATES, fabricated in silicon gate C2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 10 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC

文件：167.66 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

QUAD EXCLUSIVE NOR GATE WITH OPEN DRAIN

ST

意法半导体

QUAD EXCLUSIVE NOR GATE WITH OPEN DRAIN

DESCRIPTION The M54/74HC266/7266 are high speed CMOS QUAD EXCLUSIVE NOR GATES, fabricated in silicon gate C2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 10 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC

文件：167.66 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

HC266 QUAD EXCLUSIVE NOR GATE WITH OPEN DRAIN HC7266 QUAD EXCLUSIVE NOR GATE

DESCRIPTION The M54/74HC266/7266 are high speed CMOS QUAD EXCLUSIVE NOR GATES, fabricated in silicon gate C2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 10 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC

文件：246.45 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

HC266 QUAD EXCLUSIVE NOR GATE WITH OPEN DRAIN HC7266 QUAD EXCLUSIVE NOR GATE

DESCRIPTION The M54/74HC266/7266 are high speed CMOS QUAD EXCLUSIVE NOR GATES, fabricated in silicon gate C2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 10 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC

文件：246.45 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

HC266 QUAD EXCLUSIVE NOR GATE WITH OPEN DRAIN HC7266 QUAD EXCLUSIVE NOR GATE

DESCRIPTION The M54/74HC266/7266 are high speed CMOS QUAD EXCLUSIVE NOR GATES, fabricated in silicon gate C2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 10 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC

文件：246.45 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

HC266 QUAD EXCLUSIVE NOR GATE WITH OPEN DRAIN HC7266 QUAD EXCLUSIVE NOR GATE

DESCRIPTION The M54/74HC266/7266 are high speed CMOS QUAD EXCLUSIVE NOR GATES, fabricated in silicon gate C2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 10 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC

文件：246.45 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

QUAD EXCLUSIVE NOR GATE WITH OPEN DRAIN

DESCRIPTION The M54/74HC266/7266 are high speed CMOS QUAD EXCLUSIVE NOR GATES, fabricated in silicon gate C2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 10 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC

文件：167.66 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

QUAD EXCLUSIVE NOR GATE WITH OPEN DRAIN

DESCRIPTION The M54/74HC266/7266 are high speed CMOS QUAD EXCLUSIVE NOR GATES, fabricated in silicon gate C2MOS technology. They have the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 10 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC

文件：167.66 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体