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M74HC221M1R	文件：374.21 Kbytes Page：14 Pages	DUALMONOSTABLEMULTIVIBRATOR DESCRIPTION TheM74HC221isanhighspeedCMOSMONOSTABLEMULTIVIBRATORfabricatedwithsilicongateC2MOStechnology. ■HIGHSPEED:tPD=24ns(TYP.)atVCC=6V ■LOWPOWERDISSIPATION:STANDBYSTATE:ICC=4µA(MAX.)atTA=25°CACTIVESTATE:ICC=700µA(MAX.)atVCC=5V ■HIGHNOISEIMMU	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS
M74HC221M1R	文件：288.34 Kbytes Page：14 Pages	DUALMONOSTABLEMULTIVIBRATOR DESCRIPTION TheM54/74HC221/221AarehighspeedCMOSMONOSTABLEmultivibratorsfabricatedwithsilicongateC2MOStechnology.ItachievesthehighspeedoperationsimilartoequivalentLSTTLwhilemaintainingtheCMOSlowpowerdissipation.Therearetwotriggerinputs,AINPUT(negativeedge)and	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS

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M74HC221M1R

文件：374.21 Kbytes

Page：14 Pages

DUALMONOSTABLEMULTIVIBRATOR

DESCRIPTION TheM74HC221isanhighspeedCMOSMONOSTABLEMULTIVIBRATORfabricatedwithsilicongateC2MOStechnology. ■HIGHSPEED:tPD=24ns(TYP.)atVCC=6V ■LOWPOWERDISSIPATION:STANDBYSTATE:ICC=4µA(MAX.)atTA=25°CACTIVESTATE:ICC=700µA(MAX.)atVCC=5V ■HIGHNOISEIMMU

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

M74HC221M1R

文件：288.34 Kbytes

Page：14 Pages

DUALMONOSTABLEMULTIVIBRATOR

DESCRIPTION TheM54/74HC221/221AarehighspeedCMOSMONOSTABLEmultivibratorsfabricatedwithsilicongateC2MOStechnology.ItachievesthehighspeedoperationsimilartoequivalentLSTTLwhilemaintainingtheCMOSlowpowerdissipation.Therearetwotriggerinputs,AINPUT(negativeedge)and

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

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