3-STATE Quad Buffers

General Description The MM74HC125 and MM74HC126 are general purpose 3-STATE high speed non-inverting buffers utilizing advanced silicon-gate CMOS technology. They have high drive current outputs which enable high speed operation even when driving large bus capacitances. These circuits possess t

文件：82.21 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

QUAD BUS BUFFERS 3-STATE

DESCRIPTION The M54/74HC125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS ■ BALANCED PRO

文件：256.25 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

QUAD BUS BUFFER (3-STATE)

文件：179.47 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

QUAD BUS BUFFER (3-STATE)

ST

意法半导体

3-STATE Quad Buffers

ONSEMI

安森美半导体

QUAD BUS BUFFERS 3-STATE

DESCRIPTION The M54/74HC125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS ■ BALANCED PRO

文件：256.25 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

QUAD BUS BUFFERS 3-STATE

DESCRIPTION The M54/74HC125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS ■ BALANCED PRO

文件：256.25 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

QUAD BUS BUFFERS 3-STATE

DESCRIPTION The M54/74HC125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS ■ BALANCED PRO

文件：256.25 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

QUAD BUS BUFFERS 3-STATE

DESCRIPTION The M54/74HC125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS ■ BALANCED PRO

文件：256.25 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

QUAD BUS BUFFER (3-STATE)

文件：179.47 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体