64 Mbit (4Mb x 16), 104MHz Clock Rate, 1.8V Supply, Bare Die, Burst PSRAM

Summary description The M69KB096AB is a 64 Mbit (67,108,864 bit) PSRAM, organized as 4,194,304 Words by 16 bits. It uses a high-speed CMOS DRAM technology implemented using a one transistor-per-cell topology that achieves bigger array sizes. It provides a high-density solution for low-power handh

文件：486.7 Kbytes 页数：73 Pages

STMICROELECTRONICS

意法半导体

64 Mbit (4Mb x 16), 104MHz Clock Rate, 1.8V Supply, Bare Die, Burst PSRAM

Summary description The M69KB096AB is a 64 Mbit (67,108,864 bit) PSRAM, organized as 4,194,304 Words by 16 bits. It uses a high-speed CMOS DRAM technology implemented using a one transistor-per-cell topology that achieves bigger array sizes. It provides a high-density solution for low-power handh

文件：486.7 Kbytes 页数：73 Pages

STMICROELECTRONICS

意法半导体

64 Mbit (4Mb x 16), 104MHz Clock Rate, 1.8V Supply, Bare Die, Burst PSRAM

Summary description The M69KB096AB is a 64 Mbit (67,108,864 bit) PSRAM, organized as 4,194,304 Words by 16 bits. It uses a high-speed CMOS DRAM technology implemented using a one transistor-per-cell topology that achieves bigger array sizes. It provides a high-density solution for low-power handh

文件：486.7 Kbytes 页数：73 Pages

STMICROELECTRONICS

意法半导体

64 Mbit (4Mb x 16), 104MHz Clock Rate, 1.8V Supply, Bare Die, Burst PSRAM

ST

意法半导体