MEDIUM CURRENT SILICON RECTIFIERS

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High Current Density Surface-Mount Schottky Barrier Rectifiers

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Guardring for overvoltage protection • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qu

文件：108.71 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Schottky Barrier Rectifiers

文件：97.64 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Schottky Barrier Rectifiers

文件：110.43 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司