2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow

文件：91.72 Kbytes 页数：7 Pages

MITSUBISHI

三菱电机

2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow

文件：91.72 Kbytes 页数：7 Pages

MITSUBISHI

三菱电机

2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow

文件：76.35 Kbytes 页数：7 Pages

MITSUBISHI

三菱电机

2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5V208 is 2,097,152-bit CMOS static RAM organized as 262,144-words by 8-bit which is fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor(TFT) load cells and CMOS periphery results in a high density and low pow

文件：76.35 Kbytes 页数：7 Pages

MITSUBISHI

三菱电机