262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre

文件：43.85 Kbytes 页数：7 Pages

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5256DP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur

文件：63.41 Kbytes 页数：7 Pages

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5256DP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur

文件：63.41 Kbytes 页数：7 Pages

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre

文件：62.57 Kbytes 页数：7 Pages

Mitsubishi

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre

文件：43.85 Kbytes 页数：7 Pages

Mitsubishi

三菱电机