首页 >M5M5256DP-70LL其他IC>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | Mitsubishi | ||
262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | Mitsubishi | ||
262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | Mitsubishi | ||
262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | Mitsubishi | ||
262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | Mitsubishi | ||
262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM DESCRIPTION TheM5M5256DP,KP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-by | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | Mitsubishi |
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