262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5255DP,FP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current i

文件：64.129 Kbytes 页数：7 Pages

Mitsubishi

三菱电机

262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5255DP,FP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current i

文件：64.129 Kbytes 页数：7 Pages

Mitsubishi

三菱电机

262,144-BIT (32,768-WORD BY 8-BIT) CMOS STATIC RAM

MITSUBISHI

三菱电机