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M59DR032A100N6T

32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory

DESCRIPTION The M59DR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-byWord basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally.

文件:270.71 Kbytes 页数:38 Pages

STMICROELECTRONICS

意法半导体

M5M5256DFP-70LL

MIT

MIT

M5M5408BTP-55H

RENESAS
TSOP32

M5M5408BTP-70H

RENESAS
TSOP32

供应商型号品牌批号封装库存备注价格
ST
25+
BGA
18000
原厂直接发货进口原装
询价
ST
24+
BGA48
2200
询价
ST/意法
23+
BGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
ST/意法
2450+
BGA
6540
原装现货或订发货1-2周
询价
ST
24+
BGA
7748
原装现货假一罚十
询价
ST/意法
N/A
22+
8681
原装正品现货 可开增值税发票
询价
NA
25+
NA
27
全新原装正品支持含税
询价
ST
25+23+
BGA
35947
绝对原装正品全新进口深圳现货
询价
ST/意法
23+
BGA
89630
当天发货全新原装现货
询价
ST
25+
BGA
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
更多M59DR032A100N6T供应商 更新时间2025-10-4 16:18:00