M58WR128EB80ZB6T中文资料意法半导体数据手册PDF规格书

SUMMARY DESCRIPTION

The M58WR128E is a 128 Mbit (8Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An optional 12V VPP power supply is provided to speed up customer programming.

FEATURES SUMMARY

■ SUPPLY VOLTAGE

– VDD = 1.65V to 2.2V for Program, Erase and Read

– VDDQ = 1.65V to 3.3V for I/O Buffers

– VPP = 12V for fast Program (optional)

■ SYNCHRONOUS / ASYNCHRONOUS READ

– Synchronous Burst Read mode: 54MHz

– Asynchronous/ Synchronous Page Read mode

– Random Access: 70, 80, 100ns

■ SYNCHRONOUS BURST READ SUSPEND

■ PROGRAMMING TIME

– 8µs by Word typical for Fast Factory Program

– Double/Quadruple Word Program option

– Enhanced Factory Program options

■ MEMORY BLOCKS

– Multiple Bank Memory Array: 4 Mbit Banks

– Parameter Blocks (Top or Bottom location)

■ DUAL OPERATIONS

– Program Erase in one Bank while Read in others

– No delay between Read and Write operations

■ BLOCK LOCKING

– All blocks locked at Power up

– Any combination of blocks can be locked

– WP for Block Lock-Down

■ SECURITY

– 128 bit user programmable OTP cells

– 64 bit unique device number

– One parameter block permanently lockable

■ COMMON FLASH INTERFACE (CFI)

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M58WR128ET: 881Eh

– Bottom Device Code, M58WR128EB: 881Fh