M58WR064E-ZBT规格书原装现货意法半导体-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
M58WR064E-ZBT	文件：1.10087 Mbytes Page：82 Pages	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58WR064	文件：1.10087 Mbytes Page：82 Pages	64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58WR064B	文件：497.11 Kbytes Page：81 Pages	64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064isa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopti	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58WR064EB	文件：1.10087 Mbytes Page：82 Pages	64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58WR064EBZB	文件：1.10087 Mbytes Page：82 Pages	64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58WR064ET	文件：1.10087 Mbytes Page：82 Pages	64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58WR064ETZB	文件：1.10087 Mbytes Page：82 Pages	64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58WR064FT	文件：573.03 Kbytes Page：87 Pages	64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58WR064FTB	文件：573.03 Kbytes Page：87 Pages	64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58WR064F-ZB	文件：573.03 Kbytes Page：87 Pages	64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58WR064F-ZBE	文件：573.03 Kbytes Page：87 Pages	64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58WR064F-ZBF	文件：573.03 Kbytes Page：87 Pages	64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58WR064F-ZBT	文件：573.03 Kbytes Page：87 Pages	64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064FT/Bisa64Mbit(4Mbitx16)nonvolatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.7Vto2VVDDsupplyforthecircuitryanda1.7Vto2.24VVDDQsupplyfortheInput/Outputpins.Anopti	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
M58WR064HB	文件：2.02336 Mbytes Page：111 Pages	64Mbit(4Mbx16,MultipleBank,Burst)1.8VsupplyFlashmemories	NUMONYXNUMONYX 恒忆	NUMONYX
M58WR064HL	文件：2.08426 Mbytes Page：114 Pages	64Mbit(4Mbx16,MuxI/O,MultipleBank,Burst)1.8VsupplyFlashmemories	NUMONYXNUMONYX 恒忆	NUMONYX
M58WR064HT	文件：2.02336 Mbytes Page：111 Pages	64Mbit(4Mbx16,MultipleBank,Burst)1.8VsupplyFlashmemories	NUMONYXNUMONYX 恒忆	NUMONYX
M58WR064HU	文件：2.08426 Mbytes Page：114 Pages	64Mbit(4Mbx16,MuxI/O,MultipleBank,Burst)1.8VsupplyFlashmemories	NUMONYXNUMONYX 恒忆	NUMONYX
M58WR064KL	文件：2.33454 Mbytes Page：123 Pages	16-,32-and64-Mbit(x16,MuxI/O,MultipleBank,Burst)1.8VsupplyFlashmemories	NUMONYXNUMONYX 恒忆	NUMONYX
M58WR064KU	文件：2.33454 Mbytes Page：123 Pages	16-,32-and64-Mbit(x16,MuxI/O,MultipleBank,Burst)1.8VsupplyFlashmemories	NUMONYXNUMONYX 恒忆	NUMONYX
M58WR064T	文件：497.11 Kbytes Page：81 Pages	64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064isa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopti	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市佳鑫美电子科技有限公司	M58WR064FB60ZB6	ST	22+	BGA	2658	原装正品!现货供应!	询价
贸泽芯城（深圳）电子科技有限公司	M58WR064FB60ZB6	TNTEL	22+	BGA	3000	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
中科航电（深圳）电子集团有限公司	M58WR064FB60ZB6	ST		BGA	93480	集团化配单-有更多数量-免费送样-原包装正品现货-正规	询价
深圳市鹏和科技有限公司	M58WR064FB60ZB6F	ST	24+	BGA	5000	只做原装公司现货	询价
深圳市汇莱威科技有限公司	M58WR064FB60ZB6F	ST/意法		BGA	265209	假一罚十原包原标签常备现货!	询价
深圳市明盛嘉电子科技有限公司	M58WR064FB60ZB6F	ST/意法	21+	BGA	5000	原装现货/假一赔十/支持第三方检验	询价
深圳市威尔健半导体有限公司	M58WR064FB60ZB6F	ST/意法	23+	BGA	50000	全新原装正品现货,支持订货	询价
深圳廊盛科技有限公司	M58WR064FB60ZB6F	ST/意法	2022	BGA	80000	原装现货,OEM渠道,欢迎咨询	询价
深圳市得捷芯城科技有限公司	M58WR064FB60ZB6F	ST/意法	23+	NA/	3743	原装现货,当天可交货,原型号开票	询价
深圳市英科美电子有限公司	M58WR064FB70ZB6	ST	2021+	BGA	5175	原装正品假一罚十	询价

更多M58WR064E-ZBT供应商更新时间2024-6-14 16:18:00

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