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M58LW064D110ZA1T中文资料PDF规格书
M58LW064D110ZA1T规格书详情
SUMMARY DESCRIPTION
The M58LW064D is a 64 Mbit (8Mb x 8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply.
FEATURES SUMMARY
■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH
■ SUPPLY VOLTAGE
– VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations
■ ACCESS TIME
– Random Read 110ns
– Page Mode Read 110/25ns
■ PROGRAMMING TIME
– 16 Word Write Buffer
– 12µs Word effective programming time
■ 64 UNIFORM 64 KWord/128KByte MEMORY BLOCKS
■ ENHANCED SECURITY
– Block Protection/ Unprotection
– VPEN signal for Program Erase Enable
– 128 bit Protection Register with 64 bit Unique Code in OTP area
■ PROGRAM and ERASE SUSPEND
■ COMMON FLASH INTERFACE
■ 100, 000 PROGRAM/ERASE CYCLES per BLOCK
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code M58LW064D: 0017h
■ PACKAGES
– Compliant with Lead-Free Soldering Processes
– Lead-Free Versions
产品属性
- 型号:
M58LW064D110ZA1T
- 制造商:
STMICROELECTRONICS
- 制造商全称:
STMicroelectronics
- 功能描述:
64 Mbit(8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
2017+ |
BGA |
6528 |
只做原装正品假一赔十! |
询价 | ||
NA |
22+ |
N/A |
354000 |
询价 | |||
ST |
22+ |
BGA |
4650 |
询价 | |||
22+ |
NA |
3000 |
加我QQ或微信咨询更多详细信息, |
询价 | |||
ST |
18+ |
BGA |
12500 |
全新原装正品,本司专业配单,大单小单都配 |
询价 | ||
ST |
2023+ |
BGA |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
ST |
BGA |
699839 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ST/STMicroelectronics/意法半导 |
21+ |
BGA |
10 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ST |
20+ |
BGA |
25000 |
全新原装现货,假一赔十 |
询价 | ||
ST |
23+ |
64TBGA |
9000 |
原装正品,支持实单 |
询价 |