M58LR016D100ZC6T中文资料意法半导体数据手册PDF规格书

DESCRIPTION

The M58MR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-byWord basis using a 1.7V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally.

■ SUPPLY VOLTAGE

– VDD = VDDQ = 1.7V to 2.0V for Program, Erase and Read

– VPP = 12V for fast Program (optional)

■ MULTIPLEXED ADDRESS/DATA

■ SYNCHRONOUS / ASYNCHRONOUS READ

– Burst mode Read: 40MHz

– Page mode Read (4 Words Page)

– Random Access: 100ns

■ PROGRAMMING TIME

– 10µs by Word typical

– Two or four words programming option

■ MEMORY BLOCKS

– Dual Bank Memory Array: 4/12 Mbit

– Parameter Blocks (Top or Bottom location)

■ DUAL OPERATIONS

– Read within one Bank while Program or Erase within the other

– No delay between Read and Write operations

■ PROTECTION/SECURITY

– All Blocks protected at Power-up

– Any combination of Blocks can be protected

– 64 bit unique device identifier

– 64 bit user programmable OTP cells

– One parameter block permanently lockable

■ COMMON FLASH INTERFACE (CFI)

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M58MR016C: 88DEh

– Bottom Device Code, M58MR016D: 88E0h