QUAD BUS BUFFERS 3-STATE

DESCRIPTION The M54/74HCT125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. ■ HIGH SPEED tPD = 12 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS ■ BALANCED P

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STMICROELECTRONICS

意法半导体

QUAD BUS BUFFERS 3-STATE

ST

意法半导体

QUAD BUS BUFFERS 3-STATE

DESCRIPTION The M54/74HCT125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. ■ HIGH SPEED tPD = 12 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS ■ BALANCED P

文件：254.14 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

QUADRUPLE BUS BUFFER GATES WITH 3-STATE OUTPUTS

文件：95.56 Kbytes 页数：5 Pages

TI

德州仪器

QUADRUPLE BUS BUFFER GATES WITH 3-STATE OUTPUTS

文件：606.65 Kbytes 页数：12 Pages

TI

德州仪器

SNx4HCT125 Quadruple Bus Buffer Gates With 3-State Outputs

1 Features • Operating voltage range of 4.5 V to 5.5 V • High-current can drive up to 15 LSTTL loads • Low power consumption, 80-μA max ICC • Typical tpd = 12 ns • ±6-mA output drive at 5 V • Low input current of 1 μA max • Inputs are TTL-voltage compatible • High-current 3-state outputs d

文件：900.21 Kbytes 页数：20 Pages

TI

德州仪器