QUAD BUS BUFFERS 3-STATE

DESCRIPTION The M54/74HC125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS ■ BALANCED PRO

文件：256.25 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

QUAD BUS BUFFERS 3-STATE

DESCRIPTION The M54/74HC125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS ■ BALANCED PRO

文件：256.25 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

QUAD BUS BUFFERS 3-STATE

DESCRIPTION The M54/74HC125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS ■ BALANCED PRO

文件：256.25 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

QUAD BUS BUFFERS 3-STATE

DESCRIPTION The M54/74HC125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS ■ BALANCED PRO

文件：256.25 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

QUAD BUS BUFFERS 3-STATE

DESCRIPTION The M54/74HC125/126 are high speed CMOS QUAD BUS BUFFER (3-STATE) FABRICATED IN SILICON GATE C2MOS technology. ■ HIGH SPEED tPD = 8 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS ■ BALANCED PRO

文件：256.25 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体