MMBF5485

N-ChannelRFAmplifier

N-ChannelRFAmplifier ThisdeviceisdesignedprimarilyforelectronicswitchingapplicationssuchaslowOnResistanceanalogswitching. SourcedfromProcess50.

NTE5485

SiliconControlledRectifier(SCR)8Amp

Description: TheNTE5480throughNTE5487aremulti–purposePNPNsiliconcontrolledrectifiersinaTO64typepackagesuitedforindustrialandconsumerapplications.These8ampdevicesareavailableinvoltagesrangingfrom25Vto600V. Features: •UniformLow–LevelNoise–ImmuneGateT

NVMFD5485NL

PowerMOSFET

PLMH5485DGKSEP

LMH5485-SEPRadiationTolerantNegativeRailInput,Rail-to-RailOutput,Precision,850MHzFullyDifferentialAmplifier

PLMH5485DGKSEP

LMH5485-SEPRadiationTolerant,NegativeRailInput,Rail-to-RailOutput,Precision,850MHzFullyDifferentialAmplifier

1Features •Radiationtolerant –TIDassuredforeverywaferlotupto30krad (Si) –Singleeventlatch-up(SEL)immuneto LET=43MeV-cm2/mg –Qualifiedoverthemilitarytemperaturerange:.. –55°Cto125°C •Gainbandwidthproduct(GBWP):850MHz •Slewrate:1300V/μs •HD2,HD3:

PLMH5485HKX/EM

LMH5485-SPRadiationHardenedAssured(RHA)NegativeRailInput,Rail-to-RailOutput,Precision,850MHzFullyDifferentialAmplifier

PLMH5485HKXSLASHEM

LMH5485-SPRadiationHardenedAssured(RHA)NegativeRailInput,Rail-to-RailOutput,Precision,850MHzFullyDifferentialAmplifier

PMBF5485

N-channelfield-effecttransistors

DESCRIPTION N-channel,symmetrical,siliconjunctionFETsinasurface-mountableSOT23envelope.IntendedforuseinVHF/UHFamplifiers,oscillatorsandmixers. FEATURES •Lownoise •Interchangeabilityofdrainandsourceconnections •Highgain.

SI5485DU

P-Channel20-V(D-S)MOSFET

SMP5485

N-ChannelSiliconJunctionField-EffectTransistors

SmallOutline(SurfaceMount)PackageDevices