M54583数据手册MinebeaMitsumi中文资料规格书

描述 Description

DESCRIPTION
M54583P and M54583FP are eight-circuit collector-current synchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.FEATURES
●High breakdown voltage (BVCEO ≥50V)
●High-current driving (Ic(max) = 400mA)
●Active L-level input
●With input clamping diodes

APPLICATION
Interfaces between microcomputers and high-voltage, high current drive systems, drives of relays and printers, and MOS-bipolar logic IC interfaces

特性 Features

●High breakdown voltage (BVCEO ≥50V)
●High-current driving (Ic(max) = 400mA)
●Active L-level input
●With input clamping diodes

APPLICATION
Interfaces between microcomputers and high-voltage, high current drive systems, drives of relays and printers, and MOS-bipolar logic IC interfaces