8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

DESCRIPTION\nM54562WP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs high current driving with extremely low input current supply.FEATURES\n● High breakdown voltage (BVCEO 50V)\n● High ● High breakdown voltage (BVCEO 50V)\n● High-current driving (Io(max) = –500mA)\n● With clamping diodes\n● Driving available with PMOS IC output of 6 ~ 16V or with TTL output\n● Output current-sourcing type;

MinebeaMitsumi

美蓓亚三美

8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

文件：210.71 Kbytes 页数：5 Pages

Mitsubishi

三菱电机

8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

DESCRIPTION M54562P and M54562FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input current supply. FEATURES • High breakdown voltage (

文件：81.67 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE

DESCRIPTION M54562P and M54562FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input current supply. FEATURES • High breakdown voltage (

文件：274.46 Kbytes 页数：6 Pages

Mitsubishi

三菱电机

8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

DESCRIPTION M54562P and M54562FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input current supply. FEATURES • High breakdown voltage (

文件：81.67 Kbytes 页数：4 Pages

Mitsubishi

三菱电机