4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory

Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca

文件：857.2 Kbytes 页数：52 Pages

STMICROELECTRONICS

意法半导体

4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory

Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca

文件：857.2 Kbytes 页数：52 Pages

STMICROELECTRONICS

意法半导体

4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory

Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca

文件：857.2 Kbytes 页数：52 Pages

STMICROELECTRONICS

意法半导体

4 Mbit (5 x 64KByte Blocks 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory

Summary description The M50FLW040 is a 4 Mbit (512 Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines, an optional 12 V power supply ca

文件：857.2 Kbytes 页数：52 Pages

STMICROELECTRONICS

意法半导体