NL27WZ04DTT1G

Marking：M5；Package：TSOP-6；Dual Inverter

TheNL27WZ04isahighperformancedualinverteroperatingfrom a1.65to5.5Vsupply. Features •Designedfor1.65Vto5.5VVCCOperation •2.0nstPDatVCC=5V(Typ) •Inputs/OutputsOvervoltageTolerantupto5.5V •IOFFSupportsPartialPowerDownProtection •Sink32mAat4.5

NLV27WZ04DFT1G

Marking：M5；Package：SC-88；Dual Inverter

TheNL27WZ04isahighperformancedualinverteroperatingfrom a1.65to5.5Vsupply. Features •Designedfor1.65Vto5.5VVCCOperation •2.0nstPDatVCC=5V(Typ) •Inputs/OutputsOvervoltageTolerantupto5.5V •IOFFSupportsPartialPowerDownProtection •Sink32mAat4.5

NLV27WZ04DFT2G

Marking：M5；Package：SC-88；Dual Inverter

TheNL27WZ04isahighperformancedualinverteroperatingfrom a1.65to5.5Vsupply. Features •Designedfor1.65Vto5.5VVCCOperation •2.0nstPDatVCC=5V(Typ) •Inputs/OutputsOvervoltageTolerantupto5.5V •IOFFSupportsPartialPowerDownProtection •Sink32mAat4.5

NXS0506UP

Marking：m5；Package：SOT8025-1；SD 3.0-compatible memory card integrated auto-direction control and level translator with EMI filter and ESD protection

1.Generaldescription TheNXS0506isanSD3.0-compatiblebidirectionaldualsupplyleveltranslatorwithauto-direction control.Itisdesignedtointerfacebetweenamemorycardoperatingat1.7Vto3.6Vsignallevels andahostwithanominalsupplyvoltageof1.1Vto1.95V.Thedevice

PIMD2

Marking：M5；Package：TSOP6；50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 22 kΩ, R2 = 22 kΩ

1.Generaldescription NPN/PNPResistor-EquippeddoubleTransistor(RET)inasmallSOT457(SC-74)Surface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •100mAoutputcurrentcapability •Built-inbiasresistors •Simplifiescircuitdesign •Reducescomponentcount •

PIMD2

Marking：M5；Package：SC-74；NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

Featuresandbenefits 100mAoutputcurrentcapability Built-inbiasresistors Simplifiescircuitdesign Reducescomponentcount Reducespickandplacecosts AEC-Q101qualified

PZU884LS-C4V7-Q

Marking：M5；Package：DFN1006BD-2；Zener voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

TP74LVC1G08P6

Marking：M5；Package：DFN0808-4；SINGLE 2-INPUT POSITIVE-AND GATE

Features »Operatefrom1.65Vto5.5V «LowPowerCurrent:lcc=10pA(Max.) +24mAOutputDrive(VCC=3.0V) PowerDownProtection »ESDProtectionExceedsJESD22 -2000-VHuman-BodyModel(A114-A) -200-VMachineModel(A115-A) -1000-VCharged-DeviceModel(C101)

TPD2E009DRTR

Marking：M5；Package：SOT-723；100 Watts Peak Pulse Power per Line (tp=8/20μs)

Features 100WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsTwoLines LowClampingVoltage WorkingVoltages:5V LowLeakageCurrent IEC61000-4-2(ESD)±17kV(air),±10kV(contact) IEC61000-4-4(EFT)40A(5/50ηs) IEC61000-4-5(LIGHTING)4A(8/20μs) Applications CellularHandsets

TPD2EUSB30DRTR

Marking：M5；Package：SOT-723；100 Watts Peak Pulse Power per Line (tp=8/20μs)

Features 100WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsTwoLines LowClampingVoltage WorkingVoltages:5V LowLeakageCurrent IEC61000-4-2(ESD)±17kV(air),±10kV(contact) IEC61000-4-4(EFT)40A(5/50ηs) IEC61000-4-5(LIGHTING)4A(8/20μs) Applications CellularHandsets