4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

文件：101.78 Kbytes 页数：17 Pages

STMICROELECTRONICS

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4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

文件：101.78 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

3.3 V, 4 Mbit (512 K x 8 bit) ZEROPOWER SRAM

Description The M48Z512BV ZEROPOWER® RAM is a nonvolatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra-low power SRAM, power-fail c

文件：195.73 Kbytes 页数：20 Pages

STMICROELECTRONICS

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4 Mbit 512Kb x8 ZEROPOWER SRAM

Description The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The devices combine an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. Features ■ Integrated, ultra low power SRAM, power-fa

文件：101.78 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

4 Mbit (512 Kbit x 8) ZEROPOWER SRAM

文件：252.31 Kbytes 页数：24 Pages

STMICROELECTRONICS

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4 Mbit (512 Kbit x 8) ZEROPOWER짰 SRAM

文件：341.84 Kbytes 页数：21 Pages

STMICROELECTRONICS

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