5V or 3.3V, 16 Mbit (2Mb x 8) ZEROPOWER SRAM

DESCRIPTION The M48Z2M1/2M1Y ZEROPOWER® RAM is a non-volatile 16,777,216 bit Static RAM organized as 2,097,152 words by 8 bits. The device combines two internal lithium batteries, CMOS SRAMs and a control circuit in a plastic 36 pin DIP long Module. ■ INTEGRATED LOW POWER SRAM, POWER-F

文件：307.7 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

5 V or 3.3 V, 16 Mbit (2 Mb x 8) ZEROPOWER짰 SRAM

文件：327.16 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

5V or 3.3V, 16 Mbit (2Mb x 8) ZEROPOWER SRAM

DESCRIPTION The M48Z2M1/2M1Y ZEROPOWER® RAM is a non-volatile 16,777,216 bit Static RAM organized as 2,097,152 words by 8 bits. The device combines two internal lithium batteries, CMOS SRAMs and a control circuit in a plastic 36 pin DIP long Module. ■ INTEGRATED LOW POWER SRAM, POWER-F

文件：307.7 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

5V or 3.3V, 16 Mbit (2Mb x 8) ZEROPOWER SRAM

DESCRIPTION The M48Z2M1/2M1Y ZEROPOWER® RAM is a non-volatile 16,777,216 bit Static RAM organized as 2,097,152 words by 8 bits. The device combines two internal lithium batteries, CMOS SRAMs and a control circuit in a plastic 36 pin DIP long Module. ■ INTEGRATED LOW POWER SRAM, POWER-F

文件：307.7 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

5V or 3.3V, 16 Mbit (2Mb x 8) ZEROPOWER SRAM

DESCRIPTION The M48Z2M1/2M1Y ZEROPOWER® RAM is a non-volatile 16,777,216 bit Static RAM organized as 2,097,152 words by 8 bits. The device combines two internal lithium batteries, CMOS SRAMs and a control circuit in a plastic 36 pin DIP long Module. ■ INTEGRATED LOW POWER SRAM, POWER-F

文件：307.7 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

5V or 3.3V, 16 Mbit (2Mb x 8) ZEROPOWER SRAM

DESCRIPTION The M48Z2M1/2M1Y ZEROPOWER® RAM is a non-volatile 16,777,216 bit Static RAM organized as 2,097,152 words by 8 bits. The device combines two internal lithium batteries, CMOS SRAMs and a control circuit in a plastic 36 pin DIP long Module. ■ INTEGRATED LOW POWER SRAM, POWER-F

文件：307.7 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

5 V or 3.3 V, 16 Mbit (2 Mb x 8) ZEROPOWER짰 SRAM

文件：327.16 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

5 V or 3.3 V, 16 Mbit (2 Mb x 8) ZEROPOWER짰 SRAM

文件：327.16 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

5V or 3.3V, 16 Mbit (2Mb x 8) ZEROPOWER SRAM

ST

意法半导体

Package：36-DIP 模块；包装：管件 类别：集成电路（IC） 存储器 描述：IC NVSRAM 16MBIT PAR 36PLDIP

STMICROELECTRONICS

意法半导体