M48Z12集成电路（IC）的存储器规格书PDF中文资料

M48Z12属于集成电路（IC）的存储器。由意法半导体集团制造生产的M48Z12存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

描述 Description

The M48Z02/12 ZEROPOWER® RAM is a 2 K x 8 non-volatile static RAM which is pin and function compatible with the DS1220.

A special 24-pin, 600 mil DIP CAPHAT™ package houses the M48Z02/12 silicon with a long-life lithium button cell to form a highly integrated battery-backed memory solution.

The M48Z02/12 button cell has sufficient capacity and storage life to maintain data functionality for an accumulated time period of at least 10 years in the absence of power over commercial operating temperature range.

The M48Z02/12 is a non-volatile pin and function equivalent to any JEDEC standard 2 K x 8 SRAM. It also easily fits into many ROM, EPROM, and EEPROM sockets, providing the non-volatility of PROMs without any requirement for special WRITE timing or limitations on the number of WRITEs that can be performed.

特性 Features

■ Integrated, ultra low power SRAM and power fail control circuit

■ Unlimited WRITE cycles

■ READ cycle time equals WRITE cycle time

■ Automatic power-fail chip deselect and WRITE protection

■ WRITE protect voltages

(VPFD = power-fail deselect voltage):

– M48Z02: VCC= 4.75 to 5.5 V;

4.5 V ≤ VPFD ≤ 4.75 V

– M48Z12: VCC= 4.5 to 5.5 V;

4.2 V ≤ VPFD ≤ 4.5 V

■ Self-contained battery in the CAPHAT™ DIP package

■ Pin and function compatible with JEDEC standard 2 K x 8 SRAMs

■ RoHS compliant

– Lead-free second level interconnect