32-bit ARM짰 Cortex짰-M4F Microcontroller

文件：9.10078 Mbytes 页数：401 Pages

NUVOTON

新唐科技

DDR SDRAM SODIMM

200Pin Non ECC / ECC SODIMM based on 256Mb F-die(x16) Feature • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition wi

文件：264.05 Kbytes 页数：20 Pages

SAMSUNG

三星

DDR SDRAM SODIMM

200Pin Non ECC / ECC SODIMM based on 256Mb F-die(x16) Feature • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition wi

文件：264.05 Kbytes 页数：20 Pages

SAMSUNG

三星

DDR SDRAM SODIMM

200Pin Non ECC / ECC SODIMM based on 256Mb F-die(x16) Feature • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition wi

文件：264.05 Kbytes 页数：20 Pages

SAMSUNG

三星

DDR SDRAM SODIMM

200Pin Non ECC / ECC SODIMM based on 256Mb F-die(x16) Feature • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition wi

文件：264.05 Kbytes 页数：20 Pages

SAMSUNG

三星

DDR SDRAM SODIMM

Feature • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • Programmable Read latency 2, 2.5 (c

文件：264.46 Kbytes 页数：20 Pages

SAMSUNG

三星

DDR SDRAM SODIMM

Feature • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • Programmable Read latency 2, 2.5 (c

文件：264.46 Kbytes 页数：20 Pages

SAMSUNG

三星

DDR SDRAM SODIMM

Feature • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • Programmable Read latency 2, 2.5 (c

文件：264.46 Kbytes 页数：20 Pages

SAMSUNG

三星

Snap-In Cordgrip Strain Reliefs – Straight-Thru and Pigtail™

文件：383.84 Kbytes 页数：1 Pages

HEYCO

Snap-In Cordgrip Strain Reliefs – Straight-Thru and Pigtail™

文件：383.84 Kbytes 页数：1 Pages

HEYCO