M470T6554BZ3-LD5SLASHCC中文资料三星数据手册PDF规格书

厂商型号	M470T6554BZ3-LD5SLASHCC
功能描述	200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC
文件大小	328.21 Kbytes
页面数量	19 页
生产厂商	Samsung
中文名称	三星
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-10-12 22:59:00
人工找货	M470T6554BZ3-LD5SLASHCC价格和库存，欢迎联系客服免费人工找货

特性 Features

• Performance range

• JEDEC standard 1.8V ± 0.1V Power Supply

• VDDQ = 1.8V ± 0.1V

• 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin

• 4 Banks

• Posted CAS

• Programmable CAS Latency: 3, 4, 5

• Programmable Additive Latency: 0, 1 , 2 , 3 and 4

• Write Latency(WL) = Read Latency(RL) -1

• Burst Length: 4 , 8(Interleave/nibble sequential)

• Programmable Sequential / Interleave Burst Mode

• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)

• Off-Chip Driver(OCD) Impedance Adjustment

• On Die Termination

• Average Refresh Period 7.8us at lower than a TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C

- support High Temperature Self-Refresh rate enable feature

• Package: 60ball FBGA - 64Mx8 , 84ball FBGA - 32Mx16

• All of Lead-free products are compliant for RoHS