M470T2953CZ3-CE7中文资料三星数据手册PDF规格书

厂商型号	M470T2953CZ3-CE7
功能描述	DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC
文件大小	328.84 Kbytes
页面数量	18 页
生产厂商	Samsung semiconductor
企业简称	SAMSUNG【三星】
中文名称	三星半导体官网
原厂标识	SAMSUNG
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-5 19:30:00
人工找货	M470T2953CZ3-CE7价格和库存，欢迎联系客服免费人工找货

特性 Features

• Performance range

• JEDEC standard 1.8V ± 0.1V Power Supply

• VDDQ = 1.8V ± 0.1V

• 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin

• 4 Banks

• Posted CAS

• Programmable CAS Latency: 3, 4, 5

• Programmable Additive Latency: 0, 1 , 2 , 3 and 4

• Write Latency(WL) = Read Latency(RL) -1

• Burst Length: 4 , 8(Interleave/nibble sequential)

• Programmable Sequential / Interleave Burst Mode

• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)

• Off-Chip Driver(OCD) Impedance Adjustment

• On Die Termination with selectable values(50/75/150 ohms or disable)

• PASR(Partial Array Self Refresh)

• Average Refresh Period 7.8us at lower than a TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C

- support High Temperature Self-Refresh rate enable feature

• Package: 60ball FBGA - 64Mx8 , 84ball FBGA - 32Mx16

• All of Lead-free products are compliant for RoHS

型号：
M470T2953CZ3-CE7
制造商：
SAMSUNG
制造商全称：
Samsung semiconductor
功能描述：
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC